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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6660 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It utilizes a vertical DMOS structure with a silicon-gate process, combining the power-handling capabilities of bipolar transistors with the high input impedance of MOS devices. This device is designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds.
Key electrical specifications include a drain-source breakdown voltage of 60 V, continuous drain current of 990 mA at case temperature, and a maximum drain-source on-resistance of 3 Ohms at 1 A gate drive. The gate threshold voltage is 2 V maximum at 1 mA drain current. The device features low input capacitance of 50 pF at 25 V drain-source bias, contributing to fast switching performance. Maximum power dissipation is 725 mW at ambient temperature and 6.25 W at case temperature.
The 2N6660 is offered in a through-hole TO-205AD (TO-39) metal can package. It is suitable for applications such as motor controls, converters, amplifiers, switches, power supply circuits, and relay drivers. The device is free from secondary breakdown and exhibits excellent thermal stability.
60 V.
990 mA at case temperature.
-55°C to 150°C (junction temperature).
TO-205AD (TO-39) through-hole metal can.
3 Ohms at 1A drain current and 10V gate drive.
RoHS3 compliance is indicated but unverified. Verify with the manufacturer.
2 V maximum at 1 mA drain current.