| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,998 pcs
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1998 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The 2N6660 from Solid State Devices Inc is an N-channel enhancement-mode vertical DMOS MOSFET. It offers a drain-source breakdown voltage of 60V and a maximum drain-source on-resistance of 3Ω at VGS =10V, ID =1A. The device supports a continuous drain current of 1.1A at 25°C case temperature and can dissipate up to 6.25W.
The vertical DMOS structure and silicon-gate manufacturing provide high input impedance, low input capacitance (50pF at VDS =25V), and fast switching. An integral source-drain diode helps clamp inductive loads. The gate threshold voltage is in the range of 0.8V to 2V at ID =1mA.
The 2N6660 operates over a junction temperature range of -55°C to 150°C. It is supplied in a through-hole TO-39 metal can package (also referred to as TO-205AD), suitable for socket or direct solder mounting.
Typical applications include motor controls, converters, amplifiers, switches, power supply circuits, and drivers for relays, solenoids, lamps, and displays.
The drain-source breakdown voltage is 60V (minimum).
The maximum on-resistance is 3Ω at VGS = 10V and ID = 1A.
The device operates over a junction temperature range of -55°C to 150°C.
It is supplied in a through-hole TO-39 metal can package, also designated TO-205AD.
Existing product data lists RoHS3 Compliant, but distributor data indicates Non-RoHS Compliant. Verification is recommended.
The gate threshold voltage is between 0.8V and 2V at ID = 1mA.
Product data lists 1.1A at TC = 25°C, though datasheet and distributor data indicate 410mA. Confirm before design.