Mfr Part #:

2N6660

2N6660 is an N-Channel enhancement-mode MOSFET from Microchip Technology, featuring 60V drain-source breakdown voltage and 410mA continuous drain current in a TO-39 through-hole package.

✓ Total Stock: 2,356 pcs

$ Price Range: $14.04 - $15.90

2N6660 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	2,356 pcs On Request	2356 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N6660 Description

Short technical summary and product information.

The 2N6660 is an N-Channel enhancement-mode vertical DMOS FET manufactured by Microchip Technology. It offers a maximum drain-to-source voltage of 60V with a continuous drain current of 410mA at 25°C ambient. The device features a low on-resistance of 3 Ohms maximum at 1A drain current and 10V gate drive. Gate threshold voltage ranges from 0.8V to 2.0V, enabling operation with 5V or 10V logic levels. Input capacitance is typically 50pF at 24V drain-source voltage, contributing to fast switching performance. The MOSFET can dissipate up to 6.25W at case temperature 25°C and operates over the full military temperature range of -55°C to +150°C. Key advantages include freedom from secondary breakdown, low power drive requirement, excellent thermal stability, and an integral source-drain diode. The part is supplied in a TO-39 metal can package (TO-205AD) with through-hole mounting, making it suitable for motor controls, converters, amplifiers, switches, power supply circuits, and relay/solenoid drivers.

2N6660 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: N-Channel MOSFET 60V 410mA

Subcategory: Single MOSFET

2N6660 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N6660 Estimated Pricing

Qty	Low	High
1+	$15.90	$15.90
25+	$14.57	$14.57
100+	$14.04	$14.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N6660 Features

60V drain-source breakdown voltage.
410mA continuous drain current.
3 Ohm on-resistance at 10V gate drive.
TO-39 through-hole metal can package.
Fast switching with low input capacitance.

2N6660 Applications

Ideal for motor control circuits.
Used in power supply switch applications.
Suitable for relay and solenoid drivers.
Applicable in converter and amplifier designs.

2N6660 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

60V. This is the absolute maximum rating for Vds.

What is the continuous drain current rating?

410mA at 25°C ambient temperature.

What is the package type and mounting?

Through-hole TO-39 (TO-205AD) metal can package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the gate threshold voltage?

0.8V to 2.0V at Vds=Vgs, Id=1mA.

What is the on-resistance?

3 Ohms maximum at Id=1A, Vgs=10V.

Is the 2N6660 RoHS compliant?

RoHS3 Compliant (unverified from existing data; source conflict exists).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Microchip Technology
Current	410 mA (Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 24 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	6.25 W (Tc)
Rds On (Max) @ Id, Vgs	3 Ohm @ 1A, 10V
Storage Temperature	-55 to 150 °C
Supplier Device Package	TO-39
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 1mA