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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6659 is an N-Channel MOSFET manufactured by Supertex. It is designed for high-reliability applications and features a drain-source breakdown voltage of 35V. The device can handle a continuous drain current of up to 1.4A at 25°C case temperature and a pulsed drain current of 3A.
Key electrical characteristics include a gate-source voltage threshold typically between 0.8V and 2V. The on-state resistance (rDS(on)) is a maximum of 5 Ohms at VGS = 5V, ID = 0.3A, and 3.6 Ohms at VGS = 10V, ID = 1A, TC = 125°C. Dynamic characteristics include input capacitance (Ciss) of 35-50pF and output capacitance (Coss) of 25-40pF.
Packaged in a TO-39-3 metal can, this through-hole component is suitable for various electronic circuits requiring a robust N-channel MOSFET. The operating and storage temperature range is -55°C to +150°C.
This MOSFET is available in standard and RoHS compliant versions. The high-reliability screened version is available per MIL-PRF-19500, JANTX level.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the 2N6659 is 35V.
The continuous drain current (Id) at a case temperature of 25°C for the 2N6659 is 1.4A.
The typical gate-source voltage threshold (Vgs(th)) for the 2N6659 is 1.7V.
The maximum operating temperature for the 2N6659 is 150°C.
The 2N6659 is available in a TO-39-3 package.