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449 pcs
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449 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6609 from Toshiba is a complementary PNP power transistor housed in a TO-3 package. This through-hole component is rated for a maximum collector-emitter voltage of 140V and can handle a maximum collector current of 16A. With a maximum power dissipation of 150W, it is suitable for power amplification and switching applications.
This transistor is part of the broader category of Bipolar Junction Transistors (BJTs), specifically designed for power handling. Its TO-3 metal can package is known for its robust thermal performance, making it suitable for applications where heat dissipation is critical. The through-hole mounting ensures a secure connection on printed circuit boards.
While specific application details are not provided, power transistors like the 2N6609 are commonly used in power supplies, audio amplifiers, motor control circuits, and other high-current or high-voltage switching applications. Its PNP polarity indicates its role in circuits where current flows from collector to emitter when the base-emitter junction is forward-biased.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 140V.
The maximum collector current is 16A.
The maximum power dissipation is 150W.
The 2N6609 uses a TO-3 package.
The 2N6609 is a through-hole mounted component.
The polarity of the 2N6609 is PNP.