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2N6609 PNP bipolar transistor, 140V VCEO, 16A continuous collector current, 150W power dissipation, TO-204 (TO-3) through-hole package.
Mfr Part #:

2N6609

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
PNP bipolar transistor, 140V VCEO, 16A continuous collector current, 150W power dissipation, TO-204 (TO-3) through-hole package.
✓ Total Stock: 51,000 pcs

2N6609 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
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51,000 pcs
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51000 pcs On Request 1 On Request On Request On Request On Request On Request
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2N6609 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Junction Temperature
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N6609 Description

Short technical summary and product information.

The 2N6609 is a PNP silicon power transistor designed for high power audio, disk head positioners, and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters, and inverters.

 

Key electrical ratings include a maximum collector-emitter voltage of -140 V, continuous collector current of -16 A (peak -30 A), and power dissipation of 150 W at case temperature 25°C. DC current gain (hFE) ranges from 15 minimum to 85 maximum at 8A collector current and 4V collector-emitter voltage. Collector-emitter saturation voltage is typically -1.4 V at 8A.

 

The device is housed in a TO-204AA/TO-3 metal package with through-hole mounting. The thermal resistance from junction to case is 1.17°C/W. It is the complement to the 2N3773 NPN transistor.

2N6609 Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2N6609 PNP Bipolar Transistor
Subcategory: Power Transistor

2N6609 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N6609 Features

  • PNP silicon power transistor.
  • 140V collector-emitter voltage rating.
  • 16A continuous collector current.
  • 150W power dissipation capability.
  • TO-3 through-hole package.

2N6609 Applications

  • Designed for high power audio amplifiers.
  • Used in disk head positioners.
  • Suitable for power switching circuits.
  • Ideal for DC-DC converters and inverters.

2N6609 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

The operating junction temperature range is -65°C to 200°C per database records, though the datasheet specifies storage temperature -65 to +150°C and maximum junction temperature 150°C.

What is the package type?

The device is available in TO-204AA (TO-3) through-hole package.

Is this component RoHS compliant?

It is listed as RoHS3 Compliant in the database, but this status has not been independently verified.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -140 V.

What is the DC current gain (hFE)?

At Ic=8A and VCE=4V, the hFE ranges from 15 minimum to 85 maximum. At Ic=16A and VCE=4V, the minimum hFE is 5.

What is the maximum power dissipation?

The maximum power dissipation is 150 W at a case temperature of 25°C.

What is the complementary transistor?

The complementary (NPN) transistor is the 2N3773.

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