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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,100 pcs
|
17100 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
2,023 pcs
|
2023 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6520TA is a PNP bipolar junction transistor designed for general purpose high voltage switching and amplification. It features a maximum collector-emitter breakdown voltage of 350V, a maximum collector current of 500mA, and a power dissipation of 625mW. The DC current gain (hFE) has a minimum of 20 at Ic=50mA and Vce=10V, and the collector-emitter saturation voltage is 1V maximum at Ib=5mA and Ic=50mA. The transistor offers a transition frequency of 200 MHz and a maximum junction temperature of 150°C. This component is supplied in a through-hole TO-92-3 package (also known as TO-226-3), making it suitable for through-hole PCB assembly. It is commonly used in high voltage switching circuits, driver stages, and general purpose PNP amplifier applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
| 10+ | $0.20 | $0.20 |
| 100+ | $0.12 | $0.12 |
| 500+ | $0.09 | $0.09 |
| 1,000+ | $0.08 | $0.08 |
| 2,000+ | $0.07 | $0.07 |
| 4,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 350V.
The maximum collector current is 500mA.
The package is TO-92-3 (TO-226-3) with formed leads, through-hole mounting.
The maximum junction temperature is 150°C.
RoHS3 compliance is stated but unverified.
The minimum DC current gain (hFE) is 20 at Ic=50mA and Vce=10V.
The maximum power dissipation is 625mW.