| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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75 pcs
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75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The 2N6520RLRAG is a PNP high voltage bipolar junction transistor manufactured by onsemi (formerly On Semiconductor). It is designed for general purpose amplifier and switching applications requiring high voltage capability.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 350V, a continuous collector current rating of 500mA, and a total device power dissipation of 625mW. The transistor offers a DC current gain (hFE) ranging from 20 to 200 depending on test conditions, and a transition frequency of 200MHz. It is housed in a through-hole TO-92 (TO-226) package, suitable for manual and automated PCB assembly.
The device is Pb-Free and RoHS3 compliant, making it suitable for use in environmentally sensitive designs. The operating junction temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 956+ | $0.31 | $0.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 350V.
The maximum continuous collector current is 500mA.
The package is TO-226-3, TO-92-3 Long Body (Formed Leads) with a supplier device package of TO-92 (TO-226).
The operating junction temperature range is -55°C to +150°C.
The datasheet indicates the device is Pb-Free, and the existing database lists it as RoHS3 Compliant, though this is unverified.
The DC current gain (hFE) is a minimum of 20 at Ic=50mA, Vce=10V, and ranges from 20 to 200 at Ic=50mA, Vce=10V.
The transition frequency is 200 MHz.