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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,480 pcs
|
2480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Cutoff Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC=1 mA, VCE=10 V) | |
| DC Current Gain (hFE) (Minimum @ Ic=100 mA, Vce=10 V) | |
| DC Current Gain (hFE) (Minimum/Maximum @ IC=30 mA, VCE=10 V) | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Power | |
| Power Dissipation Derate | |
| Supplier Device Package | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| dc_current_gain_hFE (Minimum @ IC = 10 mA, VCE = 10 V) |
The 2N6517TA is an NPN bipolar junction transistor manufactured by On Semiconductor. It features a collector-emitter breakdown voltage of 350V and a continuous collector current of 500mA, making it suitable for high-voltage switching and amplification applications. The device offers a DC current gain (hFE) ranging from 30 to 200 at 30mA, with a transition frequency of 200MHz. Power dissipation is rated at 625mW at 25°C ambient, derating at 5mW/°C above 25°C. The transistor is housed in a through-hole TO-92-3 package with formed leads, allowing for easy insertion into printed circuit boards. The operating junction temperature range is -55°C to +150°C. This device is Pb-Free and RoHS compliant (unverified). Typical applications include high-voltage switching circuits, driver stages, and general-purpose amplification where moderate current and high voltage are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.36 | $0.36 |
| 10+ | $0.22 | $0.22 |
| 100+ | $0.14 | $0.14 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.09 | $0.09 |
| 2,000+ | $0.08 | $0.08 |
| 4,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 350V minimum.
The 2N6517TA is available in a TO-92-3 through-hole package (TO-226-3, TO-92-3 (TO-226AA) Formed Leads).
The operating junction temperature range is -55°C to +150°C.
The 2N6517TA is listed as RoHS3 Compliant, but this status is unverified. The datasheet confirms the device is Pb-Free.
The DC current gain ranges from 30 to 200 at 30mA collector current and 10V VCE, with minimum values specified at other test conditions.
The maximum continuous collector current is 500mA.
The total device dissipation is 625mW at 25°C ambient, derating at 5mW/°C above 25°C.