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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 1250+ | On Request | On Request | |
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Cutoff Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (Minimum @ IC = 1 mA, VCE = 10 V) | |
| DC Current Gain (Minimum @ IC = 100 mA, VCE = 10 V) | |
| DC Current Gain (Minimum @ Ic=10 mA, Vce=10 V) | |
| DC Current Gain (Minimum/Maximum @ IC = 30 mA, VCE = 10 V) | |
| DC Current Gain (Minimum/Maximum @ Ic=50 mA, Vce=10 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Derate above 25°C | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Package Type | |
| Packaging Options | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6517BU is an NPN bipolar junction transistor from On Semiconductor designed for high voltage switching and amplification applications. It features a maximum collector-emitter voltage of 350V and a continuous collector current of 500mA, making it suitable for medium-power circuits.
With a transition frequency of 200MHz and a DC current gain (hFE) ranging from 20 to 200 depending on operating conditions, this transistor offers reliable performance in linear and switching applications. The device has a maximum power dissipation of 625mW at 25°C ambient temperature and can operate over a junction temperature range of -55°C to +150°C.
The transistor is available in a through-hole TO-92-3 package, which is suitable for breadboard prototyping and PCB mounting. The package supports straight or bent lead configurations and is available in bulk, tape and reel, or ammo pack packaging options.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.37 | $0.37 |
| 10+ | $0.23 | $0.23 |
| 100+ | $0.14 | $0.14 |
| 500+ | $0.11 | $0.11 |
| 1,000+ | $0.09 | $0.09 |
| 2,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
350V.
TO-92-3 (TO-226-3) through-hole package.
-55°C to +150°C.
Yes, it is RoHS3 compliant and lead-free.
500mA.
200MHz.
Minimum 20 at 50mA/10V, maximum 200 at 30mA/10V.