| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6517 is an NPN bipolar junction transistor designed for high voltage applications. It features a collector-emitter breakdown voltage of 350V minimum and a continuous collector current rating of 500mA. The device is housed in a through-hole TO-92 package.
Electrical characteristics include a DC current gain (hFE) ranging from 20 to 200 depending on collector current, with a typical transition frequency of 200 MHz. The collector-emitter saturation voltage is low, typically 0.3V at 10mA collector current. The device can dissipate up to 625mW at 25°C ambient temperature, with a derating factor of 5mW/°C above 25°C.
The 2N6517 is suitable for general-purpose switching and amplifier circuits requiring high voltage capability. The TO-92 package allows easy through-hole mounting on PCBs. Operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 10,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
350V minimum.
500mA.
TO-92 (through-hole).
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
30 to 200.
200 MHz typical.