| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,500 pcs
|
8500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | 306 | On Request | On Request |
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The 2N6508 is a bipolar junction transistor (BJT) manufactured by On Semiconductor. It is designed for high-voltage switching applications, with a peak repetitive off-state voltage (VDRM) of 800V. The device supports an on-state RMS current of up to 25A and an average on-state current of 16A. It is housed in a TO-220AB package, suitable for through-hole mounting.
This transistor operates within a junction temperature range of -40°C to +125°C and can be stored at temperatures from -40°C to +150°C. Its thermal resistance junction-to-case is 1.5°C/W, and the maximum lead temperature during soldering is 260°C. The device is RoHS3 compliant and Pb-Free, making it suitable for environmentally conscious designs.
The 2N6508 is used in high-voltage switching, power regulation, and amplifier circuits, especially where high voltage and current handling are required. Its package allows for effective heat dissipation and reliable performance in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum off-state voltage (VDRM) of the 2N6508 is 800V.
The 2N6508 is packaged in a TO-220AB case.
-40 to +125°C.
Yes, the 2N6508 is RoHS3 compliant.