| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
685 pcs
|
685 pcs | On Request | 1 | On Request | On Request | 93 | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The 2N6478 is an NPN bipolar junction transistor manufactured by Harris Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 150V, a maximum collector current of 2.5A, and a maximum power dissipation of 50W. The device offers a minimum DC current gain (hFE) of 25 at 1A collector current and 4V collector-emitter voltage. The maximum collector-emitter saturation voltage is 2V at a base current of 500mA and collector current of 2.5A.
The transistor is housed in a TO-220-3 package, which is a widely used through-hole package suitable for heatsinking. It supports an operating junction temperature range from -65°C to 150°C. The TO-220-3 package allows for easy mounting on printed circuit boards or heatsinks for thermal management.
| Qty | Low | High |
|---|---|---|
| 186+ | $1.61 | $1.61 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vce) is 150V.
The maximum collector current (Ic) is 2.5A.
The maximum power dissipation is 50W.
The 2N6478 is available in a TO-220-3 through-hole package.
The operating junction temperature range is -65°C to 150°C.
The minimum DC current gain (hFE) is 25 at Ic=1A and Vce=4V.
The maximum collector-emitter saturation voltage (Vce(sat)) is 2V at Ib=500mA and Ic=2.5A.