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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,569 pcs
|
3569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter ON Voltage (Maximum @ VCE=4 V, IC=1.5 A) | |
| Base-Emitter ON Voltage (Maximum @ VCE=4 V, IC=4 A) | |
| Collector Cutoff Current (Maximum @ VCE=100 V, RBE=100Ω) | |
| Collector Cutoff Current (Maximum @ VCE=120 V, VEB=1.5 V, RBE=100Ω) | |
| Collector Cutoff Current (Maximum @ VCE=120 V, VEB=1.5 V, RBE=100Ω, TC=150 °C) | |
| Collector Cutoff Current (Maximum @ VCE=60 V) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (Minimum @ IC=100 mA) | |
| Collector-Emitter Breakdown Voltage (Minimum @ IC=100 mA, RBE=100Ω) | |
| Collector-Emitter Breakdown Voltage (Minimum @ IC=100 mA, VBE=1.5 V, RBE=100Ω) | |
| Collector-Emitter Voltage (Maximum @ RBE=100Ω) | |
| Collector-Emitter Voltage (Maximum @ VBE=1.5 V, RBE=100Ω) | |
| Continuous Base Current (IB) | |
| Current | |
| DC Current Gain (Minimum @ VCE=4 V, IC=4 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hfe) (Typical @ 500mA, 4V, 1kHz) | |
| Emitter Cutoff Current (IEBO @ 5V) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ Ic=1.5 A, Ib=150 mA) | |
| Voltage |
The Central Semiconductor 2N6468 is a silicon PNP power transistor housed in a hermetically sealed TO-66 metal case. It is designed for general purpose amplifier and switching applications.
Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 120V, continuous collector current of 4A, and power dissipation of 40W at case temperature 25°C. The device offers a DC current gain (hFE) range of 15 to 150 at 1.5A, 4V, and a minimum transition frequency of 5 MHz.
The transistor is through-hole mounted and available in TO-213AA / TO-66-2 packages. It is marked with the full part number. Operating and storage junction temperature range is -65°C to +200°C.
The maximum VCEO is 120V.
The continuous collector current (IC) is 4A maximum.
The 2N6468 is available in a TO-213AA / TO-66-2 through-hole package, with supplier device package TO-66.
The operating junction temperature range is -65°C to +200°C.
The part is listed as RoHS3 compliant, but this is unverified.