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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6438 from Motorola Semiconductor is a PNP Silicon Power Transistor housed in a TO-3 package. This device is engineered for high-reliability applications and offers significant power handling capabilities.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 140V, a continuous Collector Current (IC) of 25A, and a peak Collector Current (IC) of 50A. The transistor exhibits a DC Current Gain (hFE) ranging from 12 to 30 depending on the operating conditions. Saturation voltages are also specified, with VCE(sat) at 1.8V and VBE(sat) at 2.5V under high current conditions (IC=25A, IB=2.5A).
With a total power dissipation of 200W at 25°C case temperature and a low thermal resistance of 0.875°C/W, the 2N6438 is suitable for demanding power applications. The operating and storage junction temperature range is -65°C to +200°C, ensuring operation in harsh environments. The transistor also features a current gain bandwidth product (fT) of 40MHz and an output capacitance of 700pF.
This transistor is available in standard, non-RoHS (Sn/Pb plating), and RoHS compliant versions. High-reliability screened versions are also available.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2N6438 is 140V.
The maximum continuous collector current for the 2N6438 is 25A.
The maximum total power dissipation for the 2N6438 is 200W at a case temperature of 25°C.
The operating and storage junction temperature range for the 2N6438 is -65°C to +200°C.
The 2N6438 is supplied in a TO-3 package.
The typical thermal resistance from junction to case for the 2N6438 is 0.875°C/W.
The minimum DC current gain for the 2N6438 is 12 when the collector current is 25A and the collector-emitter voltage is 2.0V.