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2N6437 The 2N6437 is a PNP power silicon transistor from Microsemi Corporation, designed for power amplifier and medium speed switching applications. It features a TO-3 package.
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2N6437

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The 2N6437 is a PNP power silicon transistor from Microsemi Corporation, designed for power amplifier and medium speed switching applications. It features a TO-3 package.
✓ Total Stock: 30 pcs
$ Price Range: $0.99

2N6437 Available from 1 distributor

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30 pcs
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2N6437 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N6437 Description

Short technical summary and product information.

The 2N6437 is a PNP power silicon transistor manufactured by Microsemi Corporation. It is designed for use in power amplifier and medium speed switching applications. The transistor comes in a TO-3 package.

 

Key electrical characteristics include a Collector-Emitter Breakdown Voltage of up to -120V (for the 2N6438 variant) and a minimum Forward Current Transfer Ratio (hFE) ranging from 10 to 40 depending on the test conditions. It can handle significant current, with saturation voltages as low as -1.0V at -10A.

 

Dynamic characteristics include a Turn-On Time of 0.5µs and a Turn-Off Time of 1.25µs. The Output Capacitance is rated at a maximum of 700pF.

 

This transistor is available in JAN, JANTX, and JANTXV grades per MIL-PRF-19500/508, indicating its suitability for demanding applications.

2N6437 Quick Information

Product Type: PNP Power Silicon Transistor
Canonical Name: 2N6437 PNP Power Silicon Transistor
Subcategory: Bipolar (BJT) - Single

2N6437 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N6437 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N6437 Features

  • PNP power silicon transistor
  • TO-3 package
  • Collector-Emitter Breakdown Voltage up to -120V
  • High Forward Current Transfer Ratio
  • Designed for power amplifier applications

2N6437 Applications

  • Power amplifier circuits
  • Medium speed switching
  • High current applications
  • MIL-PRF-19500 compliant

2N6437 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type?

TO-3

What is the collector-emitter breakdown voltage?

-100V (maximum) for the 2N6437.

What is the collector-emitter saturation voltage?

-1.0V maximum at IC = -10A, IB = -1.0A.

What is the DC current gain (hFE) at -10A?

Minimum 30 at VCE = -2V, IC = -10A.

What are the turn-on and turn-off times?

Turn-on time 0.5µs, turn-off time 1.25µs at VCC = -80V, IC = -10A, IB = -1.0A.

What is the output capacitance?

700pF maximum at VCB = -10V, IE = 0, 0.1-1 MHz.

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