| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6436 from SM is a PNP Silicon Power Transistor designed for demanding applications requiring high reliability. This component is housed in a TO-3 package, facilitating efficient heat dissipation.
Key electrical specifications include a collector-emitter voltage (VCEO) of up to 100V, a continuous collector current (IC) of 25A, and a peak collector current of 50A. The device can handle a total power dissipation of 200W at 25°C case temperature, with a derating of 1.14W/°C above that temperature. The operating and storage junction temperature range is -65°C to +200°C.
Electrical characteristics include a collector-emitter sustaining voltage of 80V, a collector cutoff current of 50µA, and an emitter cutoff current of 100µA. DC current gain (hFE) ranges from 12 to 30 depending on the collector current. Saturation voltages are also specified, with VCE(sat) at 1.0V and 1.8V, and VBE(sat) at 1.8V and 2.5V under specific test conditions.
Dynamic characteristics include a current gain bandwidth product (fT) of 40MHz and an output capacitance (Cob) of up to 700pF. The transistor is available in standard and RoHS compliant versions. High-reliability screening is also available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N6436 is 100 V.
The continuous collector current (IC) for the 2N6436 is 25 A.
The maximum total power dissipation (PD) for the 2N6436 at 25°C is 200 W.
The operating and storage junction temperature range for the 2N6436 is -65°C to +200°C.
The 2N6436 is supplied in a TO-3 package.