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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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65 pcs
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65 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6426G is an NPN Darlington transistor manufactured by On Semiconductor. It features a maximum collector-emitter voltage (Vceo) of 40V and a maximum collector current (Ic) of 500mA. The device offers a high DC current gain (hFE) of at least 30000 at 100mA and 5V, making it suitable for high-gain amplification applications.
The transistor has a maximum power dissipation of 625mW and a collector-emitter saturation voltage (Vce(sat)) of 1.5V at 500µA base current and 500mA collector current. It operates over a junction temperature range of -55°C to 150°C.
The 2N6426G is available in a TO-226-3, TO-92-3 Long Body through-hole package, with the supplier device package designated as TO-92 (TO-226). It is designed for through-hole mounting, suitable for general-purpose switching and amplification in various electronic circuits.
40V.
TO-226-3, TO-92-3 Long Body (supplier device package TO-92).
-55°C to 150°C (junction).
Yes, it is RoHS3 compliant and lead-free.
Minimum 30000 at 100mA collector current and 5V Vce.
Maximum 1.5V at 500µA base current and 500mA collector current.
625mW.