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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage (Max) | |
| Base-Emitter Saturation Voltage (Max) | |
| Collector Current - Continuous | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (Minimum/Maximum @ Ic=10 mA, Vce=5 V) | |
| DC Current Gain (Minimum/Maximum @ Ic=100 mA, Vce=5 V) | |
| DC Current Gain (Minimum/Maximum @ Ic=500 mA, Vce=5 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Input Capacitance (Cib) | |
| Mounting Type | |
| Noise Figure (NF) | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ Ib=0.5 mA, Ic=50 mA) | |
| Voltage |
The 2N6426 is an NPN Darlington transistor manufactured by On Semiconductor. It is designed for applications requiring extremely high current gain at currents up to 1.0 A. The device offers a collector-emitter breakdown voltage of 40 V and a continuous collector current rating of 1.2 A. With a DC current gain (hFE) ranging from 20,000 to 300,000 depending on test conditions, this transistor provides exceptional amplification capability.
Key electrical characteristics include a maximum collector-emitter saturation voltage of 1.5 V at 500 mA collector current and 500 µA base current, and a maximum base-emitter saturation voltage of 2.0 V. The device has an output capacitance of 7.0 pF and a maximum noise figure of 10 dB, making it suitable for low-level signal amplification.
The 2N6426 is housed in a TO-226-3 / TO-92-3 Long Body through-hole package, with a supplier device package designation of TO-92 (TO-226). It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 625 mW. The thermal resistance from junction to ambient is 200°C/W.
| Qty | Low | High |
|---|---|---|
| 10,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 40 V.
The continuous collector current rating is 1.2 A.
The 2N6426 is available in a TO-226-3 / TO-92-3 Long Body through-hole package (supplier device package TO-92).
The operating junction temperature range is -55°C to 150°C.
The DC current gain ranges from 20,000 to 200,000 at Ic=10mA/Vce=5V, 30,000 to 300,000 at Ic=100mA/Vce=5V, and 20,000 to 200,000 at Ic=500mA/Vce=5V.
The maximum power dissipation is 625 mW.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.