| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,569 pcs
|
3569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The 2N6420 is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring a high breakdown voltage and moderate current handling capability.
Key electrical specifications include a maximum collector-emitter voltage of 175V, a maximum collector current of 1A, and a maximum power dissipation of 35W. The device is housed in a TO-66 (TO-213AA) metal can package, which provides robust thermal performance and is suitable for through-hole mounting.
This transistor is commonly used in power supply circuits, motor control, and other applications where a PNP device with a high voltage rating is required. The TO-66 package allows for efficient heat sinking, making it appropriate for designs where thermal management is important.
| Qty | Low | High |
|---|---|---|
| 100+ | $31.34 | $31.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 175V.
The maximum collector current is 1A.
The 2N6420 is available in a TO-213AA, TO-66-2 package, with the supplier device package being TO-66 (TO-213AA).
The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence.
The maximum power dissipation is 35W.
The mounting type is Through Hole.