| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
123 pcs
|
123 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6388 is a silicon NPN power Darlington transistor manufactured by On Semiconductor. It is designed for low and medium frequency power applications requiring high current gain and robust performance.
Key electrical ratings include a collector-emitter voltage (VCEO) of 80V, a continuous collector current of 10A (15A peak), and a total power dissipation of 65W at case temperatures up to 25°C. The device offers a minimum DC current gain of 1000 at 5A and 3V, with typical gain reaching 20000. It also features an integrated antiparallel collector-emitter diode.
The transistor is mounted in a standard JEDEC TO-220 plastic package with through-hole termination, suitable for heatsinking in power circuits. The operating junction temperature range is -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.49 | $0.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80V.
The continuous collector current (IC) is 10A, with a peak current (ICM) of 15A.
The 2N6388 is available in a TO-220-3 through-hole package.
The operating junction temperature range is -65°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified.
The minimum DC current gain (hFE) is 1000 at Ic=5A, Vce=3V, with a typical value of 20000.
The total power dissipation is 65W at case temperature ≤25°C.