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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
123 pcs
|
123 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base-Emitter Voltage (Typical @ Ic=10 A, Vce=3 V) | |
| Base-Emitter Voltage (Typical @ Ic=5 A, Vce=3 V) | |
| Collector Base Capacitance @ Vcb=10V, f=1MHz | |
| Collector Cut-off Current (Maximum @ Ib=0) | |
| Collector Cut-off Current (Maximum @ Vce=80 V) | |
| Collector Cut-off Current (Maximum @ Vce=80 V, Tc=125 °C) | |
| Collector Peak Current (ICM) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (Maximum @ Ic=5 A, Ib=10 mA) | |
| Collector-Emitter Sustaining Voltage (VCEO(sus)) | |
| Current | |
| DC Current Gain (Minimum @ Ic=10 A, Vce=3 V) | |
| DC Current Gain (Minimum/Typical @ Ic=5 A, Vce=3 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Maximum Junction Temperature | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Parallel-diode Forward Voltage @ If=10A | |
| Power | |
| Power Dissipation (@ TC = 25 °C) | |
| Second Breakdown Collector Current @ Vce=25V | |
| Second Breakdown Energy | |
| Small Signal Current Gain (Typical @ Ic=1 A, Vce=10 V, f=1 MHz) | |
| Small Signal Current Gain (Typical @ Ic=1 A, Vce=10 V, f=1 kHz) | |
| Storage Temperature | |
| Supplier Device Package | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6388 is a silicon NPN power Darlington transistor manufactured by On Semiconductor. It is designed for low and medium frequency power applications requiring high current gain and robust performance.
Key electrical ratings include a collector-emitter voltage (VCEO) of 80V, a continuous collector current of 10A (15A peak), and a total power dissipation of 65W at case temperatures up to 25°C. The device offers a minimum DC current gain of 1000 at 5A and 3V, with typical gain reaching 20000. It also features an integrated antiparallel collector-emitter diode.
The transistor is mounted in a standard JEDEC TO-220 plastic package with through-hole termination, suitable for heatsinking in power circuits. The operating junction temperature range is -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.49 | $0.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80V.
The continuous collector current (IC) is 10A, with a peak current (ICM) of 15A.
The 2N6388 is available in a TO-220-3 through-hole package.
The operating junction temperature range is -65°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified.
The minimum DC current gain (hFE) is 1000 at Ic=5A, Vce=3V, with a typical value of 20000.
The total power dissipation is 65W at case temperature ≤25°C.