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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6387 is a silicon NPN Darlington power transistor originally manufactured by Harris Corporation. It is designed for applications requiring high current handling and amplification. Key electrical specifications include a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 10A. The transistor offers a minimum DC current gain (hFE) of 1000 at 5A and 3V. Its Vce saturation is a maximum of 3V at 100mA and 10A.
Packaged in a TO-220AB through-hole package, the 2N6387 is suitable for mounting on printed circuit boards. It has a maximum power dissipation of 2W and an operating temperature range from -65°C to 150°C.
This device is described as RoHS non-compliant. It is commonly used in industrial motor controls, switch-mode power supplies, and high-current linear regulators.
Though now obsolete and superseded by newer devices, the 2N6387 remains referenced in legacy military, aerospace, and industrial equipment due to its heritage in Harris’s trusted analog/power portfolio.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V CEO) is 60V.
The maximum continuous collector current (Ic) is 10A.
The minimum DC current gain (hFE) is 1000 at 5A and 3V.
The Vce saturation is a maximum of 3V at 100mA and 10A.
The operating temperature range is -65°C to 150°C.
The 2N6387 is supplied in a TO-220AB through-hole package.