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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6379 is a PNP power bipolar junction transistor manufactured by Microchip Technology, designed for high-current and high-voltage switching and amplification applications. It is rated for a minimum collector-emitter breakdown voltage of 120V and a maximum collector current of 50A, with a maximum power dissipation of 250W.
The transistor supports a wide operating junction temperature range from -65°C to 200°C, making it suitable for demanding environments. The device is packaged in a through-hole TO-204AA (TO-3) metal can package, which provides robust thermal performance and mechanical durability.
This component is typically used in power regulation, motor control, and industrial power stages where high current handling and reliable switching are required. The PNP polarity complements NPN transistors in push-pull and bridge configurations.
| Qty | Low | High |
|---|---|---|
| 100+ | $319.77 | $319.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N6379 operates over a junction temperature range of -65°C to 200°C.
The 2N6379 is available in a TO-204AA (TO-3) through-hole package.
RoHS compliance is indicated as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.
The 2N6379 is a PNP transistor.
The maximum collector current is 50A.
The minimum collector-emitter breakdown voltage is 120V.
The maximum power dissipation is 250W.