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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6352 is an NPN Darlington transistor manufactured by Microchip Technology. It is designed for high-current switching and amplification applications requiring high gain. The Darlington configuration provides a minimum DC current gain of 2000 at 5A collector current and 5V collector-emitter voltage, enabling low base drive requirements. The transistor has a collector-emitter breakdown voltage of 80V and can handle continuous collector current up to 5A, with a maximum power dissipation of 2W. The saturation voltage is typically 2.5V at 10mA base current and 5A collector current. The device is housed in a through-hole TO-66 (TO-213AA) package, suitable for socket or chassis mounting. It operates over a wide junction temperature range from -65°C to 200°C, making it suitable for harsh environments. The part is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 100+ | $34.70 | $34.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
Through-hole TO-66 (TO-213AA) package.
-65°C to 200°C junction temperature.
It is listed as RoHS3 compliant, but this status is unverified.
2000 at 5A collector current and 5V collector-emitter voltage.
Maximum 2.5V at 10mA base current and 5A collector current.
2W.