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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6330 is a PNP silicon power transistor manufactured by PEP. It is designed for general-purpose applications requiring significant current handling capabilities. This transistor features a maximum collector-emitter voltage rating of 80V and can handle a continuous collector current of up to 30A.
The 2N6330 is housed in a TO-3 package, which is a metal can package suitable for through-hole mounting and designed for high power dissipation. Its robust construction makes it suitable for various power switching and amplification tasks in industrial and commercial electronic systems.
Key electrical characteristics include its PNP bipolar junction transistor type, enabling it to function as a switch or amplifier in circuits. The TO-3 package facilitates efficient heat dissipation, crucial for high-power applications. This component is part of the broader category of discrete semiconductor products, specifically single bipolar junction transistors.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2N6330 is 80V.
The maximum continuous collector current for the 2N6330 is 30A.
The 2N6330 is a PNP bipolar junction transistor.
The 2N6330 transistor is supplied in a TO-3 package.