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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6317 is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring a collector-emitter voltage of 60V and a collector current of 7A. With a power dissipation of 90W, it can handle moderate power levels. The transistor offers a minimum DC current gain (hFE) of 25 at Ic=2.5A, Vce=4V, and a maximum Vce saturation voltage of 2V at Ib=1.75A, Ic=7A. It is housed in a through-hole TO-213AA (TO-66-2) package, suitable for socket or direct soldering on PCBs. The operating junction temperature range is -65°C to 200°C, allowing use in harsh environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $35.19 | $35.19 |
| 100+ | $32.67 | $32.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-65°C to 200°C (junction temperature).
TO-213AA, TO-66-2 (through-hole).
RoHS3 Compliant (unverified).
60V.
7A.
90W.
Minimum 25 at Ic=2.5A, Vce=4V.