| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,500 pcs
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5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6316 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Manufactured by Microchip Technology, this transistor offers a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 7A, making it suitable for medium-power circuits.
With a power dissipation capability of 90W, the 2N6316 can handle significant thermal loads. The DC current gain (hFE) is a minimum of 35 at Ic=500mA and Vce=4V, and the saturation voltage is a maximum of 2V at Ib=1.75A and Ic=7A. These parameters ensure reliable switching performance.
The transistor is housed in a TO-66 (TO-213AA) through-hole package, which provides robust mechanical support and efficient heat dissipation. It operates over a junction temperature range of -65°C to 200°C, allowing use in harsh environments.
| Qty | Low | High |
|---|---|---|
| 100+ | $31.80 | $31.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
The 2N6316 is available in a TO-66 (TO-213AA) through-hole package.
-65°C to 200°C (junction).
According to the database, the 2N6316 is RoHS3 Compliant, but this information is unverified.
7A continuous.
90W.
Minimum hFE of 35 at Ic=500mA, Vce=4V.