Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6308 is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for through-hole mounting and is supplied in a TO-204AA / TO-3 package (supplier device package TO-204AD).
Electrical characteristics include a maximum collector-emitter voltage of 350V, maximum continuous collector current of 8A, and maximum power dissipation of 125W. The minimum DC current gain (hFE) is 12 at Ic=3A, Vce=5V, and the maximum collector-emitter saturation voltage is 5V at Ib=2.67A, Ic=8A.
The transistor operates over a junction temperature range of -65°C to 200°C. It is RoHS3 compliant and REACH unaffected, though these compliance claims are unverified. The component is suitable for high-voltage, high-current power switching and amplification applications.
350 V
8 A
125 W
-65°C to 200°C
TO-204AA, TO-3
Yes, RoHS3 compliant
12 at Ic=3A, Vce=5V