| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature |
The 2N6307 from RCA is a high-voltage NPN power transistor housed in a TO-3 package. This device is designed for general-purpose power applications, offering a collector-emitter breakdown voltage (VCEO) of 300V and a continuous collector current (IC) of 8A.
Key electrical characteristics include a power dissipation rating of 125W at 25°C, a DC current gain (hFE) ranging from 15 to 75,000, and a current gain-bandwidth product (fT) of 5 MHz. The transistor also features a low collector-emitter saturation voltage (VCE(sat)) and is suitable for various power switching and amplification tasks.
With a junction temperature range of -65°C to 200°C and a storage temperature range of -65°C to 200°C, the 2N6307 is built for demanding environments. Its TO-3 package facilitates efficient heat dissipation, making it a robust choice for power supply circuits, audio amplifiers, and other high-power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the 2N6307 transistor is 300V.
The 2N6307 can handle a continuous collector current (IC) of 8A.
The power dissipation (PD) for the 2N6307 is 125W at 25°C.
The 2N6307 transistor comes in a TO-3 package.
The DC current gain (hFE) for the 2N6307 ranges from 15 to 75,000.
The 2N6307 has a junction temperature range of -65°C to 200°C and a storage temperature range of -65°C to 200°C.