| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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785 pcs
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785 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6306 from Texas Instruments is an NPN Power Silicon Transistor qualified per MIL-PRF-19500/498. This device is designed for robust performance with a maximum collector-emitter voltage (VCEO) of 350 Vdc and a maximum collector current (IC) of 8 Adc.
Key electrical characteristics include a maximum collector-base voltage (VCBO) of 700 Vdc and a maximum emitter-base voltage (VEBO) of 8.0 Vdc. The transistor offers a range of forward-current transfer ratios (hFE) depending on the operating conditions, with values from 3 to 75.
With a total power dissipation of 125W at TC = +25°C, the 2N6306 is suitable for power applications. It operates within a temperature range of -65°C to +200°C. The device is housed in a TO-3 (TO-204AA) package, indicating a through-hole mounting type suitable for demanding thermal environments.
Dynamic characteristics include an output capacitance (Cobo) of 250 pF and switching times such as turn-on time (ton) of 0.6 µs and turn-off time (toff) of 3.0 µs, making it suitable for various switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N6306 is 350 Vdc.
The maximum continuous collector current (IC) for the 2N6306 is 8 Adc.
The operating and storage temperature range is -65°C to +200°C.
The 2N6306 is supplied in a TO-3 (TO-204AA) package.