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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
430 pcs
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430 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6301E3 is an NPN Darlington transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring high current gain.
It has a collector-emitter breakdown voltage (Vce) of 80 V and a collector current (Ic) rating of 500 µA. The DC current gain (hFE) has a minimum value of 750 at Ic=4A, Vce=3V. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 3 V at Ib=80mA, Ic=8A. Power dissipation is rated at 75 W.
The transistor is available in a TO-213AA / TO-66-2 package and is designed for through-hole mounting. It can operate over a junction temperature range of -55°C to 200°C.
The 2N6301E3 is available in a TO-213AA / TO-66-2 through-hole package.
-55°C to 200°C junction temperature.
RoHS3 compliant status is unverified (low confidence).
80V.
Minimum 750 at Ic=4A, Vce=3V.
75W.
Through hole.