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2N6299 2N6299 is a PNP Darlington power silicon transistor rated for 80V collector-emitter voltage and 8A continuous collector current. Housed in a hermetic TO-213AA (TO-66) through-hole package.
Mfr Part #:

2N6299

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
2N6299 is a PNP Darlington power silicon transistor rated for 80V collector-emitter voltage and 8A continuous collector current. Housed in a hermetic TO-213AA (TO-66) through-hole package.
✓ Total Stock: 4,000 pcs
$ Price Range: $31.54

2N6299 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N6299 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Military Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Termination Finish
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight
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2N6299 Description

Short technical summary and product information.

The 2N6299 is a PNP Darlington power silicon transistor manufactured by Microchip Technology. It is designed for high-reliability applications and is qualified to MIL-PRF-19500/540 up to JANTXV level.

 

This transistor features a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current rating of 8A. It can dissipate up to 64W at a case temperature of 25°C. The DC current gain (hFE) is a minimum of 750 at 4A collector current and 3V collector-emitter voltage.

 

The device is housed in a hermetic TO-213AA (TO-66) package with through-hole mounting. The package is nickel plated with a nickel cap and features a 180-degree lead orientation. Termination finish is solder dipped (Sn63/Pb37) or matte-tin for RoHS compliant versions (commercial grade only).

2N6299 Quick Information

Product Type: PNP Darlington Power Silicon Transistor
Series: 2N6298/2N6299
Canonical Name: 2N6299 PNP Darlington Power Silicon Transistor
Subcategory: PNP Darlington

2N6299 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant
Lead Free: No

2N6299 Estimated Pricing

Qty Low High
100+ $31.54 $31.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N6299 Features

  • PNP Darlington power silicon transistor design.
  • Rated for 80V collector-emitter maximum voltage.
  • 8A continuous collector current capability.
  • 64W power dissipation at 25°C case temperature.
  • Hermetic TO-213AA (TO-66) through-hole package.

2N6299 Applications

  • Ideal for military and aerospace power circuits.
  • Used in high-reliability switching applications.
  • Suitable for high-current amplification stages.

2N6299 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2N6299?

The maximum collector-emitter voltage (VCEO) is 80V.

What is the maximum collector current rating of the 2N6299?

The maximum continuous collector current (IC) is 8A.

What is the package type for the 2N6299?

The package type is TO-213AA (TO-66) and it is a through-hole mount.

What is the operating temperature range of the 2N6299?

The operating junction temperature range is -65°C to 175°C.

Is the 2N6299 RoHS compliant?

The datasheet indicates RoHS compliant versions are available on commercial grade only; military grade may not be RoHS compliant. RoHS status is unverified.

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