| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6287 is a PNP Darlington power silicon transistor designed for high-current switching and amplification applications. It features a collector-emitter voltage (VCEO) of -100V and a continuous collector current rating of -20A, with a maximum power dissipation of 175W at a case temperature of 25°C. The device offers a minimum DC current gain (hFE) of 750 at 10A collector current and 3V collector-emitter voltage, ensuring efficient current amplification.
This transistor is housed in a hermetically sealed TO-204AA (TO-3) package with a chassis-mount design, providing robust mechanical stability and effective heat dissipation through the metal case. The operating junction and storage temperature range spans -65°C to +175°C, with a thermal resistance junction-to-case of 0.855°C/W.
Typical applications include military, space, and other high-reliability systems where high current handling and rugged packaging are required. The Darlington configuration provides high current gain, making it suitable for motor control, power supply regulation, and solenoid driving circuits.
The collector-emitter voltage (VCEO) is -100V.
The maximum continuous collector current is -20A.
The 2N6287 is supplied in a TO-204AA (TO-3) chassis-mount package.
The total power dissipation is 175W at a case temperature of 25°C.
The junction and storage temperature range is -65°C to +175°C.
The minimum DC current gain is 750 at a collector current of 10A and collector-emitter voltage of 3V.