| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
371 pcs
|
371 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Texas Instruments 2N6285 is a complementary silicon power Darlington transistor manufactured using an epitaxial base process. This device is designed for general purpose high current, high gain amplifier, and switching applications. It features a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 20A.
The transistor is housed in a TO-3 case, suitable for power applications requiring efficient heat dissipation. The operating and storage junction temperature range is -65°C to +200°C, with a total power dissipation of 160W at 25°C case temperature.
Key electrical characteristics include a DC current gain (hFE) ranging from 750 to 18000 at 10A, and a collector-emitter saturation voltage (VCE(sat)) of up to 2.0V at 10A. The output capacitance (Cob) is up to 400pF at 10V.
This component is available as non-RoHS (Sn/Pb plating) or RoHS compliant by adding a "-PBF" suffix. High-reliability screened versions are also available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N6285 is 100V.
The 2N6285 has a continuous collector current (IC) rating of 20A.
The 2N6285 is supplied in a TO-3 package.
The operating and storage junction temperature range for the 2N6285 is -65°C to +200°C.
The DC current gain (hFE) of the 2N6285 at IC = 10A and VCE = 3.0V ranges from 750 to 18000.