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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,222 pcs
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3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6283 is a high-power NPN Darlington transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring high current gain. The Darlington configuration provides a minimum DC current gain (hFE) of 1500 at a collector current of 1A and collector-emitter voltage of 3V.
This device is rated for a collector-emitter voltage (Vceo) of 80V and a maximum power dissipation of 175W. The maximum collector-emitter saturation voltage is 3V at a base current of 200mA and collector current of 20A. The transistor is housed in a through-hole TO-204AA (TO-3) package, suitable for socket or chassis mounting.
The 2N6283 has an operating junction temperature range of -65°C to 200°C, making it suitable for demanding thermal environments. It is commonly used in power switching circuits, motor control, and high-current driver stages.
The 2N6283 is available in a TO-204AA, TO-3 through-hole package.
The operating junction temperature range is -65°C to 200°C.
The collector-emitter voltage (Vceo) is 80V.
The minimum DC current gain (hFE) is 1500 at Ic=1A, Vce=3V.
The maximum power dissipation is 175W.