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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6282 is a high-power NPN Darlington transistor manufactured by Microchip Technology. Designed for switching and amplification applications, it offers a maximum collector-emitter voltage of 60V and a continuous collector current rating of 20A. The device can dissipate up to 160W of power, making it suitable for demanding power control circuits.
With a minimum DC current gain (hFE) of 750 at 10A and 3V, the Darlington configuration provides high current gain, reducing the drive current required. The maximum collector-emitter saturation voltage is 3V at a base current of 200mA and collector current of 20A. The transistor is specified for operation over a junction temperature range of -65°C to 200°C.
The 2N6282 is offered in a Die form factor, intended for surface mount assembly. This bare die package is commonly used in hybrid circuits and multi-chip modules where space is at a premium. The device is RoHS compliant and has an MSL rating of 1 (unlimited), indicating no moisture sensitivity concerns.
| Qty | Low | High |
|---|---|---|
| 100+ | $63.09 | $63.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
20A.
160W.
750 at 10A collector current and 3V collector-emitter voltage.
-65°C to 200°C (junction temperature).
Die (bare die) for surface mount mounting.
RoHS3 compliant (unverified).