| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6277 is a single NPN bipolar junction transistor from Microchip Technology, designed for high-power switching and amplification applications.
Key electrical specifications include a collector-emitter voltage (Vceo) of 150 V, continuous collector current (Ic) of 50 A, and power dissipation (Ptot) of 250 W. The DC current gain (hFE) is a minimum of 50 at 1A collector current and 4V Vce. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 3V at a collector current of 50A and base current of 10A.
The device is housed in a TO-3 (TO-204AA) metal can package with through-hole mounting. It operates over a junction temperature range of -65°C to 200°C, making it suitable for demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 100+ | $127.39 | $127.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 150 V.
The maximum continuous collector current (Ic) is 50 A.
The power dissipation (Ptot) is 250 W.
The 2N6277 is available in a TO-3 (TO-204AA) through-hole package.
The junction operating temperature range is -65°C to 200°C.
The minimum DC current gain is 50 at a collector current of 1 A and Vce of 4 V.