| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,362 pcs
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3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6259 is an NPN bipolar junction transistor manufactured by NTE Electronics. It is designed for general-purpose switching and amplification applications requiring high voltage and current handling.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 150V, a continuous collector current rating of 16A, and a power dissipation of 150W. The DC current gain (hFE) is a minimum of 15 at a test condition of Ic=8A and Vce=2V. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 2.5V at Ib=3.2A and Ic=16A.
The transistor is housed in a TO-204AA (TO-3) through-hole metal package, suitable for socket or chassis mounting. The operating junction temperature range is -65°C to 200°C.
The collector-emitter breakdown voltage (VCEO) is 150V.
The maximum continuous collector current (Ic) is 16A.
The power dissipation is 150W.
The 2N6259 is available in a TO-204AA (TO-3) through-hole package.
The operating junction temperature range is -65°C to 200°C.
The minimum DC current gain (hFE) is 15 at Ic=8A and Vce=2V.
The maximum collector-emitter saturation voltage (Vce(sat)) is 2.5V at Ib=3.2A and Ic=16A.