| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6232 is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a collector-emitter voltage (Vce) of 100V, a collector current (Ic) of 10A, and a power dissipation (Pd) of 1.25W. The DC current gain (hFE) is a minimum of 25 at Ic=5A and Vce=2V. The device is rated for an operating junction temperature range of -65°C to 200°C.
The transistor is housed in a through-hole TO-205AA (TO-5-3 Metal Can) package, with a supplier device package designation of TO-5. This package is suitable for socketed or soldered mounting on printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 100+ | $50.10 | $50.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N6232 is a PNP bipolar junction transistor.
The collector-emitter voltage (Vce) is 100V.
The collector current (Ic) is 10A.
The power dissipation (Pd) is 1.25W.
The operating junction temperature range is -65°C to 200°C.
The 2N6232 is available in a through-hole TO-205AA (TO-5-3 Metal Can) package, also referred to as TO-5.
The minimum DC current gain (hFE) is 25 at Ic=5A and Vce=2V.