2N6212 The 2N6212 is a PNP high power silicon transistor qualified per MIL-PRF-19500/461. It features a 300V collector-emitter voltage, 2A collector current, and 35W power dissipation.
Mfr Part #:

2N6212

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The 2N6212 is a PNP high power silicon transistor qualified per MIL-PRF-19500/461. It features a 300V collector-emitter voltage, 2A collector current, and 35W power dissipation.
Total Stock: 2,336 pcs
$ Price Range: $45.74

2N6212 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,336 pcs
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2N6212 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Base Current
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Current
Current-Gain - Bandwidth Product
DC Current Gain (Maximum @ I_C = 1 A, V_CE = 4 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Junction to Case Thermal Resistance
Military Grade
Mounting Type
Operating Temperature
Output Capacitance
Power
Power Dissipation (Maximum @ T_C = +25 °C)
Supplier Device Package
Transistor Type
Turn Off Time
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage

2N6212 Description

Short technical summary and product information.

The 2N6212 is a PNP high power silicon bipolar junction transistor manufactured by Microchip Technology. It is qualified per MIL-PRF-19500/461 and available in JAN, JANTX, and JANTXV levels.

 

Key electrical characteristics include a maximum collector-emitter voltage of 300V, collector-base voltage of 350V, and emitter-base voltage of 6V. The device can handle a continuous collector current of 2A and a base current of 1A. DC current gain (hFE) ranges from 30 to 100 at IC=1A, VCE=5V. Collector-emitter saturation voltage is 1.6V maximum at IC=1A, IB=125mA.

 

The transistor is housed in a TO-66 (TO-213AA) package with through-hole mounting. Maximum power dissipation is 3W at 25°C ambient and 35W at 25°C case temperature. Operating and storage temperature range is -55°C to 200°C. Junction-to-case thermal resistance is 5°C/W.

2N6212 Quick Information

Product Type: Bipolar Junction Transistor
Series: JAN
Canonical Name: 2N6212 PNP High Power Silicon Transistor
Subcategory: High Power Transistor

2N6212 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N6212 Estimated Pricing

Qty Low High
100+ $45.74 $45.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N6212 Features

  • 300V maximum collector-emitter voltage.
  • 2A continuous collector current rating.
  • 35W power dissipation at case temperature.
  • Qualified per MIL-PRF-19500/461.
  • TO-66 through-hole package.

2N6212 Applications

  • High voltage switching circuits.
  • Power amplifier output stages.
  • Military and aerospace electronics.
  • Industrial control systems.

2N6212 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N6212?

300V

What is the maximum collector current rating?

2A

What is the power dissipation of the 2N6212?

3W at 25°C ambient, 35W at 25°C case temperature

What package is the 2N6212 available in?

TO-66 (TO-213AA) through-hole package

What is the operating temperature range?

-55°C to 200°C

What is the DC current gain (hFE) range?

30 to 100 at IC=1A, VCE=5V

Is the 2N6212 RoHS compliant?

RoHS3 Compliant (unverified)

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