Mfr Part #:

2N6211

Mfr Name: RCA

The RCA 2N6211 is a PNP Silicon High Power Transistor designed for demanding applications. It offers robust performance with a maximum collector current of 2A and power dissipation up to 35W.

✓ Total Stock: 11 pcs

$ Price Range: $0.09

2N6211 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	11 pcs On Request	11 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N6211 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	RCA
Turn Off Time	3.1 µs
Turn On Time	0.6 µs

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2N6211 Description

Short technical summary and product information.

The RCA 2N6211 is a PNP Silicon High Power Transistor, part of a series including the 2N6212 and 2N6213, offering varying voltage ratings. This transistor is designed for high-reliability applications, with options for high-reliability screening per MIL-PRF-19500, JANTX level.

Key electrical characteristics include a collector-emitter voltage (VCE) up to 350V for the 2N6213 variant, a continuous collector current (IC) of 2A, and a base current (IB) of 1A. Power dissipation is rated at 3W when ambient temperature is 25°C and 35W when case temperature is 25°C. The operating junction and storage temperature range is -55 to 200°C.

This transistor is housed in a TO-66 case, suitable for through-hole mounting. It features a thermal resistance junction-to-case of 5.0 °C/W. The 2N6211 series is available in both non-RoHS (Sn/Pb plating) and RoHS compliant versions, indicated by a '-PBF' suffix.

Applications for the 2N6211 series include power switching and amplification circuits where high voltage and current handling capabilities are required. Its high-reliability screening options make it suitable for military and aerospace applications.

2N6211 Quick Information

Product Type: PNP Silicon High Power Transistor

Canonical Name: 2N6211 PNP Silicon High Power Transistor

Subcategory: Bipolar (BJT) - Single

2N6211 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N6211 Estimated Pricing

Qty	Low	High
1+	$0.09	$0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N6211 Features

PNP Silicon High Power Transistor.
Collector-Emitter Voltage up to 350V.
Continuous Collector Current of 2A.
Power Dissipation up to 35W.
TO-66 package for through-hole mounting.

2N6211 Applications

Suitable for power switching circuits.
Used in high-power amplification stages.
Ideal for high-reliability applications.
Designed for demanding industrial uses.

2N6211 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the 2N6211 series transistors?

The collector-emitter voltage (VCE) ranges from 225V for the 2N6211 up to 350V for the 2N6213.

What is the maximum continuous collector current for the 2N6211?

The maximum continuous collector current (IC) for the 2N6211 series is 2 Adc.

What is the power dissipation of the 2N6211 transistor?

The power dissipation (PD) is 3 Watts at TA = 25°C and 35 Watts at TC = 25°C.

What is the operating temperature range for the 2N6211?

The operating junction and storage temperature range (TJ, Tstg) is -55 to 200 °C.

What package type is the 2N6211 transistor supplied in?

The 2N6211 transistor is supplied in a TO-66 case.

Is the 2N6211 available in a RoHS compliant version?

Yes, the 2N6211 is available as RoHS compliant by adding the '-PBF' suffix.