| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current (Ic) | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Collector-Emitter Saturation Voltage (Vce Sat) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Industrial Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cobo) | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Transistor Type | |
| Turn-Off Time (toff) | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| dc_current_gain (Minimum/Maximum @ Ic=1 A, Vce=2.8 V) | |
| dc_current_gain (Minimum/Maximum @ Ic=1 A, Vce=5 V) |
The 2N6211 is a PNP high power silicon transistor manufactured by Microchip Technology. It is qualified per MIL-PRF-19500/461 and is available in the JAN series. The device is housed in a TO-66 (TO-213AA) through-hole package.
Key electrical specifications include a collector-emitter breakdown voltage of 225V (minimum), a collector-base breakdown voltage of 275V (minimum), and an emitter-base breakdown voltage of 6V (minimum). The collector current is rated at 2A maximum, with a base current of 1A maximum. The DC current gain (hFE) ranges from 10 to 100 at Ic=1A, Vce=2.8V, and from 30 to 175 at Ic=1A, Vce=5V. The collector-emitter saturation voltage is 1.4V maximum at Ic=1A, Ib=125mA.
The device can dissipate up to 3W at an ambient temperature of 25°C and up to 35W at a case temperature of 25°C. The thermal resistance from junction to case is 5°C/W. The operating and storage temperature range is -55°C to 200°C.
This transistor is suitable for high-power switching and amplification applications. Its through-hole TO-66 package allows for easy mounting on heatsinks. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 100+ | $41.58 | $41.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) is 225V minimum at Ic=200mA, f=30-60Hz.
The maximum collector current (IC) is 2A.
The operating and storage temperature range is -55°C to 200°C.
The 2N6211 is available in a TO-66 (TO-213AA) through-hole package.
The 2N6211 is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The maximum power dissipation at TC=25°C is 35W.
The DC current gain ranges from 10 to 100 at Ic=1A, Vce=2.8V, and from 30 to 175 at Ic=1A, Vce=5V.