2N6111G The 2N6111G is a PNP silicon power transistor from On Semiconductor. It features a 30V collector-emitter breakdown voltage, 7A continuous collector current, and 40W power dissipation in a TO-220 through-hole package.
Mfr Part #:

2N6111G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N6111G is a PNP silicon power transistor from On Semiconductor. It features a 30V collector-emitter breakdown voltage, 7A continuous collector current, and 40W power dissipation in a TO-220 through-hole package.
Total Stock: 1,700 pcs

2N6111G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,100 pcs
1100 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
600 pcs
600 pcs On Request 1 On Request On Request On Request On Request On Request

2N6111G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector-Base Voltage (VCB)
Collector-Emitter Breakdown Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEB)
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N6111G Description

Short technical summary and product information.

The 2N6111G is a PNP bipolar junction transistor designed for general-purpose amplifier and switching applications. It is part of On Semiconductor's complementary silicon power transistor family and is offered in a Pb-free, RoHS-compliant TO-220 package.

 

Key electrical specifications include a minimum collector-emitter breakdown voltage (VCEO) of 30V, a maximum collector-base voltage (VCB) of 40V, and a maximum emitter-base voltage (VEB) of 5V. The device can handle a continuous collector current of up to 7A with a peak current capability of 10A. Maximum power dissipation is rated at 40W at a case temperature of 25°C, with a junction-to-case thermal resistance of 3.125°C/W.

 

The transistor offers a minimum DC current gain (hFE) of 30 at a collector current of 3A and Vce of 4V. The maximum collector-emitter saturation voltage is 3.5V at a base current of 3A and collector current of 7A. The device is housed in a standard TO-220-3 through-hole package, making it suitable for a wide range of power management and switching circuits.

2N6111G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N6111
Canonical Name: 2N6111G PNP Bipolar Power Transistor
Subcategory: Single BJT

2N6111G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N6111G Features

  • PNP silicon power transistor for general purpose use.
  • Rated for 30V collector-emitter breakdown voltage.
  • Supports 7A continuous and 10A peak collector current.
  • Maximum power dissipation of 40W at 25°C case temperature.
  • Housed in a Pb-free, RoHS-compliant TO-220 package.

2N6111G Applications

  • Suitable for general-purpose amplifier circuits.
  • Used in medium-power switching applications.
  • Ideal for linear power supply and regulator designs.
  • Applicable in motor and actuator control circuits.

2N6111G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N6111G?

The minimum collector-emitter breakdown voltage (VCEO) is 30V at Ic=100mA, Ib=0.

What is the maximum continuous collector current for the 2N6111G?

The maximum continuous collector current is 7A, with a peak current capability of 10A.

What is the power dissipation rating of the 2N6111G?

The maximum power dissipation is 40W at a case temperature of 25°C.

What package type does the 2N6111G come in?

The 2N6111G is available in a TO-220-3 through-hole package.

What is the operating temperature range for the 2N6111G?

The operating junction temperature range is -65°C to 150°C.

Is the 2N6111G RoHS compliant?

Yes, the datasheet states the device is Pb-Free and RoHS Compliant.

What is the DC current gain (hFE) of the 2N6111G?

The minimum DC current gain (hFE) is 30 at a collector current of 3A and Vce of 4V.

Home
Account

Categories