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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
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1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector Current - Peak | |
| Collector-Base Voltage (VCB) | |
| Collector-Emitter Breakdown Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEB) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N6111G is a PNP bipolar junction transistor designed for general-purpose amplifier and switching applications. It is part of On Semiconductor's complementary silicon power transistor family and is offered in a Pb-free, RoHS-compliant TO-220 package.
Key electrical specifications include a minimum collector-emitter breakdown voltage (VCEO) of 30V, a maximum collector-base voltage (VCB) of 40V, and a maximum emitter-base voltage (VEB) of 5V. The device can handle a continuous collector current of up to 7A with a peak current capability of 10A. Maximum power dissipation is rated at 40W at a case temperature of 25°C, with a junction-to-case thermal resistance of 3.125°C/W.
The transistor offers a minimum DC current gain (hFE) of 30 at a collector current of 3A and Vce of 4V. The maximum collector-emitter saturation voltage is 3.5V at a base current of 3A and collector current of 7A. The device is housed in a standard TO-220-3 through-hole package, making it suitable for a wide range of power management and switching circuits.
The minimum collector-emitter breakdown voltage (VCEO) is 30V at Ic=100mA, Ib=0.
The maximum continuous collector current is 7A, with a peak current capability of 10A.
The maximum power dissipation is 40W at a case temperature of 25°C.
The 2N6111G is available in a TO-220-3 through-hole package.
The operating junction temperature range is -65°C to 150°C.
Yes, the datasheet states the device is Pb-Free and RoHS Compliant.
The minimum DC current gain (hFE) is 30 at a collector current of 3A and Vce of 4V.