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2N6109G The 2N6109G is a PNP silicon power transistor from onsemi, rated for 50V collector-emitter voltage and 7A continuous collector current in a TO-220 package.
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2N6109G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N6109G is a PNP silicon power transistor from onsemi, rated for 50V collector-emitter voltage and 7A continuous collector current in a TO-220 package.
✓ Total Stock: 1,293 pcs

2N6109G Available from 1 distributor

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Bristol Electronics ✓
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1,293 pcs
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2N6109G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Industrial Grade
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N6109G Description

Short technical summary and product information.

The 2N6109G is a complementary silicon PNP power transistor designed for general-purpose amplifier and switching applications. It features a collector-emitter voltage (VCEO) of 50V, continuous collector current of 7A, and peak collector current capability of 10A. The device can dissipate up to 40W at a case temperature of 25°C.

 

With a minimum DC current gain (hFE) of 30 at 2.5A and 4V, and a transition frequency of 10 MHz, this transistor is suitable for medium-power linear and switching circuits. The collector-emitter saturation voltage is typically 3.5V maximum at 3A base current and 7A collector current.

 

The 2N6109G is housed in a standard TO-220-3 through-hole package, making it easy to mount on heatsinks for thermal management. The operating junction temperature range is -65°C to 150°C, with a junction-to-case thermal resistance of 3.125°C/W. This device is Pb-Free and RoHS compliant.

2N6109G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N6109
Canonical Name: 2N6109G PNP Bipolar Transistor
Subcategory: Single PNP

2N6109G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2N6109G Features

  • PNP silicon power transistor design.
  • Rated for 50V collector-emitter voltage.
  • Supports 7A continuous collector current.
  • Dissipates up to 40W at 25°C case temperature.
  • Housed in a TO-220 through-hole package.

2N6109G Applications

  • Used in general-purpose amplifier circuits.
  • Suitable for medium-power switching applications.
  • Ideal for linear power supply designs.
  • Works in motor control driver stages.

2N6109G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2N6109G?

The 2N6109G has a minimum collector-emitter voltage (VCEO) of 50V.

What is the maximum continuous collector current?

The maximum continuous collector current is 7A.

What package is the 2N6109G available in?

The 2N6109G is available in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

Is the 2N6109G RoHS compliant?

Yes, the 2N6109G is RoHS3 compliant and Pb-Free as stated in the datasheet.

What is the power dissipation rating?

The maximum total power dissipation is 40W at a case temperature of 25°C.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 30 at a test condition of Ic=2.5A and Vce=4V.

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