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2N6107G PNP bipolar junction transistor rated for 70V collector-emitter voltage and 7A continuous collector current. Housed in a TO-220 through-hole package.
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2N6107G

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Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar junction transistor rated for 70V collector-emitter voltage and 7A continuous collector current. Housed in a TO-220 through-hole package.
✓ Total Stock: 11 pcs

2N6107G Available from 1 distributor

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2N6107G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N6107G Description

Short technical summary and product information.

The 2N6107G is a PNP bipolar junction transistor from On Semiconductor designed for general-purpose amplifier and switching applications. It features a collector-emitter voltage (VCEO) of 70V, continuous collector current of 7A (peak 10A), and a maximum power dissipation of 40W at case temperature 25°C.

 

This transistor offers a DC current gain (hFE) of at least 30 at 2A collector current and 4V VCE, and a transition frequency of 10 MHz. The collector-emitter saturation voltage is typically 3.5V at 3A base current and 7A collector current.

 

The device is housed in a standard TO-220-3 through-hole package, suitable for heatsinking. It is RoHS compliant and has an MSL rating of 1 (unlimited). The operating junction temperature range is -65°C to 150°C.

 

The 2N6107G is the Pb-free version of the 2N6107 and is complemented by NPN types such as the 2N6292. It is suitable for power switching and linear amplification circuits.

2N6107G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N6107
Canonical Name: 2N6107G PNP Bipolar Junction Transistor
Subcategory: Single

2N6107G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N6107G Features

  • PNP silicon power transistor in TO-220 package.
  • Rated for 70V collector-emitter voltage and 7A continuous current.
  • Maximum power dissipation of 40W at 25°C case temperature.
  • DC current gain of 30 minimum at 2A collector current.
  • RoHS compliant and MSL level 1.

2N6107G Applications

  • General-purpose amplifier and switching circuits.
  • Power management and linear regulation.
  • Motor control and driver stages.
  • Audio output stages and power amplification.

2N6107G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2N6107G?

70V (VCEO).

What package does the 2N6107G come in?

TO-220-3 through-hole package.

What is the operating temperature range of the 2N6107G?

-65°C to 150°C (junction temperature).

Is the 2N6107G RoHS compliant?

Yes, it is RoHS3 compliant per the datasheet.

What is the maximum collector current of the 2N6107G?

7A continuous, 10A peak.

What is the power dissipation of the 2N6107G?

40W at case temperature 25°C.

What is the DC current gain (hFE) of the 2N6107G?

Minimum 30 at 2A collector current and 4V VCE.

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