BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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The RCA 2N6059 is a high-reliability NPN Silicon Power Darlington Transistor housed in a TO-3 metal case. It is engineered for use in power linear and low frequency switching applications. This transistor offers a continuous collector current of 12A and a peak collector current of 20A, with a maximum power dissipation of 150W at 25°C case temperature.
Key electrical characteristics include a collector-emitter sustaining voltage (VCEO(sus)) of 100V, a base-emitter on voltage (VBE(ON)) of 2.8V at 6A, and a DC current gain (hFE) of 750 minimum at 6A. The transition frequency (fT) is 4MHz at 5A and 3V.
The TO-3 package is suitable for through-hole mounting. The operating and storage junction temperature range is -65°C to +200°C, with a thermal resistance from junction to case of 1.17°C/W. The device is available in RoHS3 compliant and non-RoHS versions.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N6059 transistor has a continuous collector current of 12A and a peak collector current of 20A.
The maximum power dissipation for the 2N6059 transistor is 150W at a case temperature of 25°C.
The operating and storage junction temperature range for the 2N6059 transistor is -65°C to +200°C.
The 2N6059 transistor is supplied in a TO-3 metal case package.
The DC current gain (hFE) of the 2N6059 transistor is a minimum of 750 at IC = 6A and VCE = 3.0V.
The collector-emitter sustaining voltage (VCEO(sus)) for the 2N6059 transistor is 100V at 100mA.