LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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61 pcs
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61 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-23 21:33:16 |
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The 2N6059 from Central Semiconductor Corp is a silicon epitaxial-base NPN transistor in a monolithic Darlington configuration. It is designed for power linear and low frequency switching applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 12A. The device features a high DC current gain (hFE) of 750 at 6A and a transition frequency (fT) of 4MHz at 5A. The maximum power dissipation is rated at 150W at 25°C case temperature.
This transistor is housed in a TO-3 metal case and is suitable for through-hole mounting. The operating and storage junction temperature range is from -65°C to +200°C.
Available options include high-reliability screening and RoHS compliance by adding a suffix to the part number.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N6059 is 100V.
The 2N6059 transistor has a continuous collector current (IC) rating of 12A.
The 2N6059 is supplied in a TO-3 metal case package.
The operating and storage junction temperature range for the 2N6059 is -65°C to +200°C.
The DC current gain (hFE) of the 2N6059 is a minimum of 750 when measured at IC = 6A and VCE = 3.0V.
The transition frequency (fT) for the 2N6059 is a minimum of 4MHz, measured at IC = 5.0A, VCE = 3.0V, and f = 1.0MHz.
