2N6052G PNP Darlington power transistor rated for 100V collector-emitter voltage and 12A continuous current. Features high DC current gain of 750 minimum at 6A and Pb-Free TO-3 package.
Mfr Part #:

2N6052G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP Darlington power transistor rated for 100V collector-emitter voltage and 12A continuous current. Features high DC current gain of 750 minimum at 6A and Pb-Free TO-3 package.
Total Stock: 5 pcs

2N6052G Available from 1 distributor

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2N6052G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector-Base Voltage (VCB)
Collector-Emitter Sustaining Voltage (VCEO(sus))
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (Typical @ Ic=5 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
Derating Factor
Emitter-Base Voltage (VEB)
Mounting Type
Operating Temperature
Power
Standard Package Qty
Storage Temperature Range
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N6052G Description

Short technical summary and product information.

The 2N6052G is a PNP Darlington silicon power transistor from On Semiconductor, designed for general-purpose amplifier and low-frequency switching applications. It delivers a maximum collector-emitter voltage (VCEO) of 100V and continuous collector current of 12A, with a peak rating of 20A. The device features a high DC current gain (hFE) of 750 minimum at 6A, 3V, and a typical gain of 3500 at 5A. The collector-emitter saturation voltage is 3V maximum at 12A collector current and 120mA base current. Total power dissipation is 150W at 25°C case temperature, with a derating factor of 0.857 W/°C above 25°C. The operating junction temperature range spans -65°C to 200°C, and the thermal resistance from junction to case is 1.17°C/W. The transistor is housed in a TO-204AA (TO-3) through-hole package, which offers robust mechanical mounting and excellent heat dissipation. The datasheet confirms the device is Pb-Free, consistent with RoHS compliance. This component is suitable for high-current driver stages, motor control, and other power switching applications.

2N6052G Quick Information

Product Type: Darlington Power Transistor
Series: 2N
Canonical Name: 2N6052G PNP Darlington Silicon Power Transistor
Subcategory: Single BJT

2N6052G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N6052G Features

  • High DC current gain of 750 minimum.
  • Rated for 100V collector-emitter voltage.
  • Continuous collector current up to 12A.
  • 150W power dissipation at 25°C case temperature.
  • Pb-Free and RoHS compliant package.

2N6052G Applications

  • General-purpose amplifier and switching circuits.
  • Ideal for low-frequency power switching.
  • Suitable for high-current driver stages.
  • Motor control and solenoid driving.

2N6052G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2N6052G?

The maximum collector-emitter voltage (VCEO) is 100 V.

What package does the 2N6052G come in?

The 2N6052G is available in the TO-204AA (TO-3) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -65°C to 200°C.

Is the 2N6052G RoHS compliant?

The status is listed as RoHS3 Compliant but has not been independently verified. The datasheet states it is Pb-Free.

What is the DC current gain (hFE) at 6A?

The minimum DC current gain is 750 at Ic=6A, VCE=3V.

What is the maximum continuous collector current?

The maximum continuous collector current is 12 A.

What is the total power dissipation at 25°C case temperature?

The maximum total power dissipation is 150 W at Tc=25°C, derating at 0.857 W/°C above 25°C.

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