2N6040 The 2N6040 is a PNP Darlington power transistor from On Semiconductor. It features a 60V collector-emitter voltage, 8A continuous collector current, and 75W power dissipation in a TO-220 through-hole package.
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2N6040

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Mfr Name: On Semiconductor
On Semiconductor
The 2N6040 is a PNP Darlington power transistor from On Semiconductor. It features a 60V collector-emitter voltage, 8A continuous collector current, and 75W power dissipation in a TO-220 through-hole package.
Total Stock: 11 pcs

2N6040 Available from 1 distributor

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2N6040 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector-Emitter Sustaining Voltage (Min)
Current
DC Current Gain (Typical @ Ic = 4 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating (Human Body Model)
ESD Rating - Machine Model
Emitter-Base Voltage
Mounting Type
Operating Temperature
Peak Collector Current
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ Ic = 4 A)
Voltage

2N6040 Description

Short technical summary and product information.

The 2N6040 is a PNP Darlington power transistor manufactured by On Semiconductor. It is designed for general-purpose amplifier and low-speed switching applications. This device features monolithic construction with built-in base-emitter shunt resistors.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 60V, continuous collector current of 8A, and a peak collector current of 16A. The DC current gain (hFE) is a minimum of 1000 at 4A collector current, with a typical gain of 2500. The collector-emitter saturation voltage is a maximum of 2V at 4A collector current. Power dissipation is rated at 75W at a case temperature of 25°C.

 

The transistor is housed in a TO-220-3 through-hole package and has an operating junction temperature range of -65°C to 150°C. The device is Pb-Free and RoHS compliant.

2N6040 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N6040 PNP Darlington Power Transistor
Subcategory: Single Bipolar Junction Transistors

2N6040 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

2N6040 Features

  • PNP Darlington transistor for high current gain.
  • 60V collector-emitter voltage rating.
  • 8A continuous collector current capability.
  • 75W power dissipation in TO-220 package.
  • Pb-Free and RoHS compliant package.

2N6040 Applications

  • General-purpose amplifier circuits.
  • Low-speed switching applications.
  • Medium-power linear amplification.
  • Darlington pair driver stages.

2N6040 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2N6040?

The collector-emitter voltage (VCEO) is 60V.

What is the maximum continuous collector current for the 2N6040?

The maximum continuous collector current is 8A.

What is the power dissipation of the 2N6040?

The power dissipation is 75W at a case temperature of 25°C.

What package type is the 2N6040 available in?

The 2N6040 is available in a TO-220-3 through-hole package.

What is the operating temperature range for the 2N6040?

The operating junction temperature range is -65°C to 150°C.

Is the 2N6040 RoHS compliant?

The datasheet states the device is Pb-Free and RoHS Compliant, but this has not been independently verified.

What is the DC current gain (hFE) of the 2N6040?

The minimum DC current gain is 1000 at 4A collector current and 4V collector-emitter voltage, with a typical gain of 2500.

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