2N6039G 2N6039G is an NPN Darlington transistor from On Semiconductor with 80V collector-emitter voltage, 4A continuous collector current, and 40W power dissipation. It comes in a TO-126 through-hole package.
Mfr Part #:

2N6039G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
2N6039G is an NPN Darlington transistor from On Semiconductor with 80V collector-emitter voltage, 4A continuous collector current, and 40W power dissipation. It comes in a TO-126 through-hole package.
Total Stock: 122 pcs

2N6039G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
114 pcs
114 pcs On Request 1 On Request On Request 915 On Request On Request
Non-Authorised Inventory information
8 pcs
8 pcs On Request 1 On Request On Request On Request On Request On Request

2N6039G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector Current - Peak (ICM)
Collector Cutoff Current (Maximum @ Vce=80 V, Ib=0)
Collector Cutoff Current (Maximum @ Vce=80 V, Vbe(off)=1.5 V)
Collector-Emitter Sustaining Voltage (VCEO(sus))
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating (Human Body Model)
ESD Rating - Machine Model
Emitter-Base Voltage (VEBO)
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N6039G Description

Short technical summary and product information.

The 2N6039G is an NPN Darlington silicon power transistor from On Semiconductor, designed for general-purpose amplifier and low-speed switching applications. It features a collector-emitter voltage of 80V, continuous collector current of 4A, and peak collector current of 8A. The device offers a minimum DC current gain of 750 at 2A, 3V, and a maximum VCE saturation of 3V at 40mA base current and 4A collector current. Power dissipation is 40W at case temperature 25°C, with junction-to-case thermal resistance of 3.12°C/W and junction-to-ambient thermal resistance of 83.3°C/W. The transistor is packaged in a TO-126 (TO-225AA) through-hole package and is rated for operation from -65°C to 150°C junction temperature. It includes ESD protection rated at >8000V HBM and >400V MM. The device is Pb-Free and RoHS3 compliant, making it suitable for environmentally sensitive designs. This NPN type is complementary to the PNP 2N6036G, enabling push-pull configurations.

2N6039G Quick Information

Product Type: Darlington Transistor
Canonical Name: 2N6039G NPN Darlington Transistor
Subcategory: Darlington

2N6039G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N6039G Features

  • NPN Darlington silicon power transistor.
  • 80V collector-emitter sustaining voltage.
  • 4A continuous collector current rating.
  • 40W power dissipation at 25°C case.
  • ESD rated: HBM >8000V, MM >400V.

2N6039G Applications

  • General purpose amplifier applications.
  • Low-speed switching applications.
  • Complementary pair with PNP 2N6036G.

2N6039G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage (VCEO) of the 2N6039G?

80V

What package does the 2N6039G come in?

TO-225AA (also known as TO-126-3), supplier device package TO-126.

What is the operating temperature range?

-65°C to 150°C (junction temperature).

Is the 2N6039G RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free as per the datasheet.

What is the DC current gain (hFE) of the 2N6039G?

Minimum 750 at Ic=2A, Vce=3V.

What is the maximum collector current?

Continuous: 4A; Peak: 8A.

What is the power dissipation of the 2N6039G?

40W at case temperature 25°C, derate 320mW/°C above 25°C.

Home
Account

Categories